
radoslaw.wasielewski@uwr.edu.pl
tel. +48 71 375 93 19
Zainteresowania
- interface
- general physics
- semiconductors
- schottky barrier
- xps
- ups
- gan 0001
- semiconductor
- chemical physics
- surface structure
Dyscyplina naukowa
- nauki fizyczne
Najnowsze publikacje
- Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
- Unveiling the Interplay between a Au(100) Electrode, Adsorbed TTMAPP Porphyrin Cations, and Iodide Anions: An EC-STM and CV Study
- Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001)
- Physicochemical properties of the Sb/p-SiC interface
- Hafnium and Nitrogen Interaction at Hf/GaN(0001) Interface
- Electronic system for the complex measurement of a Wilberforce pendulum
- Adsorption of Cu on Au(110): in situ EC-STM investigations
- Highly Reproducible Automated Tip Coater for In Situ and Operando EC-STM Measurements
- Ru/GaN(0001) Interface Properties
- Electronic Properties of Structures Containing Films of Alq3 and LiBr Deposited on Si(111) Crystal
- Adsorption of Cu on Au(110): in situ EC-STM investigations
- 2D molecular network as single atom catalyst model explored with EC-STM toward oxygen reduction reaction
- Storage of atomic hydrogen in the 2D confined space: in operando visualization of the protons intercalation under the graphene layer