{"id":88528,"date":"2025-04-01T14:39:58","date_gmt":"2025-04-01T12:39:58","guid":{"rendered":"https:\/\/wfa.uwr.edu.pl\/?p=88528"},"modified":"2025-04-01T14:40:04","modified_gmt":"2025-04-01T12:40:04","slug":"effects-of-short-term-exposure-of-monocrystalline-hfse2-surface-to-air","status":"publish","type":"post","link":"https:\/\/wfa.uwr.edu.pl\/en\/2025\/04\/01\/effects-of-short-term-exposure-of-monocrystalline-hfse2-surface-to-air\/","title":{"rendered":"Effects of short-term exposure of monocrystalline HfSe2 surface to air"},"content":{"rendered":"<h2 class=\"wp-block-post-title\">Effects of short-term exposure of monocrystalline HfSe2 surface to air<\/h2>\n\n\n<p>One way to improve silicon-based electronics is to integrate silicon into a material that has properties such as an energy gap in the 1-2 eV range and high charge carrier mobility. A material that meets these requirements is HfSe2, which belongs to the group of transition metal dichalcogenides (TMDs). A key aspect concerning the possible use of HfSe2 in electronics is its oxidation. <\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><img loading=\"lazy\" decoding=\"async\" width=\"1333\" height=\"533\" src=\"https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg.jpg\" alt=\"air\" class=\"wp-image-88408\" srcset=\"https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg.jpg 1333w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-300x120.jpg 300w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-1024x409.jpg 1024w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-768x307.jpg 768w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-24x10.jpg 24w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-36x14.jpg 36w, https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-48x19.jpg 48w\" sizes=\"auto, (max-width: 1333px) 100vw, 1333px\" \/><\/figure>\n\n\n\n<p>In the article \u201e\ud835\udde7\ud835\uddf5\ud835\uddf2 \ud835\uddf2\ud835\uddf3\ud835\uddf3\ud835\uddf2\ud835\uddf0\ud835\ude01\ud835\ude00 \ud835\uddfc\ud835\uddf3 \ud835\ude00\ud835\uddf5\ud835\uddfc\ud835\uddff\ud835\ude01-\ud835\ude01\ud835\uddf2\ud835\uddff\ud835\uddfa \ud835\uddee\ud835\uddf6\ud835\uddff \ud835\uddf2\ud835\ude05\ud835\uddfd\ud835\uddfc\ud835\ude00\ud835\ude02\ud835\uddff\ud835\uddf2 \ud835\uddfc\ud835\uddf3 \ud835\ude01\ud835\uddf5\ud835\uddf2 \ud835\uddfa\ud835\uddfc\ud835\uddfb\ud835\uddfc\ud835\uddf0\ud835\uddff\ud835\ude06\ud835\ude00\ud835\ude01\ud835\uddee\ud835\uddf9 \ud835\udddb\ud835\uddf3\ud835\udde6\ud835\uddf2\ud835\udfee \ud835\ude00\ud835\ude02\ud835\uddff\ud835\uddf3\ud835\uddee\ud835\uddf0\ud835\uddf2\u201d, the authors presented a study of the dynamics of early oxidation of HfSe2 surfaces during exposure to weathering using techniques such as SEM, EDX, XPS, and RS. Experimental results are backed by the results of DFT calculations of the O\/HfSe2 adsorption system. The study shows a rapid transformation of the surface with the formation of Se-rich round structures, whose coverage increases with exposure time. It is related to an intense diffusion of Se atoms, with the simultaneous penetration of O atoms deep into the crystal, leading to the formation of a layer of HfO2 in the subsurface region. <\/p>\n\n\n<div class=\"bs__links\">\r\n    <div class=\"bs__links__section\">\r\n        <ul class=\"bs__links__list\">\r\n                            <li class=\"bs__links__list__item\">\r\n                    <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/abs\/pii\/S0169433225002600?via%3Dihub\" class=\"bs__links__list__item__link\">\r\n                        Link to the publication \r\n                        <div class=\"bs__links__list__item__link__before__icon\">\r\n                            <div class=\"bs__links__list__item__link__icon\">\r\n                                <svg width=\"40px\" height=\"40px\" viewBox=\"0 0 22 16\" version=\"1.1\">\r\n                                <g stroke=\"none\" strokeWidth=\"1\" fill=\"black\" fillRule=\"evenodd\">\r\n                                    <g>\r\n                                    <polygon points=\"13.4875 0 12 1.6215 18.7875 8 12 14.3795 13.4875 16 21.9995 8\" \/>\r\n                                    <\/g>\r\n                                <\/g>\r\n                                <\/svg>\r\n                            <\/div>\r\n                        <\/div>\r\n                    <\/a>\r\n                <li>\r\n                    <\/ul>\r\n    <\/div>\r\n<\/div>","protected":false},"excerpt":{"rendered":"<p>One way to improve silicon-based electronics is to integrate silicon into a material that has properties such as an energy gap in the 1-2 eV range and high charge carrier mobility. A material that meets these requirements is HfSe2, which belongs to the group of transition metal dichalcogenides (TMDs). A key aspect concerning the possible [&hellip;]<\/p>\n","protected":false},"author":7182,"featured_media":88408,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"inline_featured_image":false,"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[389],"tags":[392],"class_list":["post-88528","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-publikacje-en","tag-publikacje-en"],"featured_image_urls_v2":{"full":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg.jpg",1333,533,false],"thumbnail":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-150x150.jpg",150,150,true],"medium":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-300x120.jpg",300,120,true],"medium_large":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-768x307.jpg",768,307,true],"large":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-1024x409.jpg",1024,409,true],"1536x1536":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg.jpg",1333,533,false],"2048x2048":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg.jpg",1333,533,false],"menu-24x24":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-24x10.jpg",24,10,true],"menu-36x36":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-36x14.jpg",36,14,true],"menu-48x48":["https:\/\/wfa.uwr.edu.pl\/wp-content\/uploads\/sites\/216\/2025\/03\/1-s2.0-S0169433225002600-ga1_lrg-48x19.jpg",48,19,true]},"post_excerpt_stackable_v2":"<p>Effects of short-term exposure of monocrystalline HfSe2 surface to air One way to improve silicon-based electronics is to integrate silicon into a material that has properties such as an energy gap in the 1-2 eV range and high charge carrier mobility. A material that meets these requirements is HfSe2, which belongs to the group of transition metal dichalcogenides (TMDs). A key aspect concerning the possible use of HfSe2 in electronics is its oxidation. In the article \u201e\ud835\udde7\ud835\uddf5\ud835\uddf2 \ud835\uddf2\ud835\uddf3\ud835\uddf3\ud835\uddf2\ud835\uddf0\ud835\ude01\ud835\ude00 \ud835\uddfc\ud835\uddf3 \ud835\ude00\ud835\uddf5\ud835\uddfc\ud835\uddff\ud835\ude01-\ud835\ude01\ud835\uddf2\ud835\uddff\ud835\uddfa \ud835\uddee\ud835\uddf6\ud835\uddff \ud835\uddf2\ud835\ude05\ud835\uddfd\ud835\uddfc\ud835\ude00\ud835\ude02\ud835\uddff\ud835\uddf2 \ud835\uddfc\ud835\uddf3 \ud835\ude01\ud835\uddf5\ud835\uddf2 \ud835\uddfa\ud835\uddfc\ud835\uddfb\ud835\uddfc\ud835\uddf0\ud835\uddff\ud835\ude06\ud835\ude00\ud835\ude01\ud835\uddee\ud835\uddf9 \ud835\udddb\ud835\uddf3\ud835\udde6\ud835\uddf2\ud835\udfee \ud835\ude00\ud835\ude02\ud835\uddff\ud835\uddf3\ud835\uddee\ud835\uddf0\ud835\uddf2\u201d, the authors presented a study of the dynamics of early oxidation of HfSe2&hellip;<\/p>\n","category_list_v2":"<a href=\"https:\/\/wfa.uwr.edu.pl\/en\/category\/publikacje-en\/\" rel=\"category tag\">Publications<\/a>","author_info_v2":{"name":"kswistak","url":"https:\/\/wfa.uwr.edu.pl\/en\/author\/kswistak\/"},"comments_num_v2":"0 comments","acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.1.1 - 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