How to grow graphene? Is it difficult?

You can find answers to these questions in the newest paper ”𝘚𝘵𝘦𝘱-𝘣𝘺-𝘴𝘵𝘦𝘱 𝘴𝘪𝘭𝘪𝘤𝘰𝘯 𝘤𝘢𝘳𝘣𝘪𝘥𝘦 𝘨𝘳𝘢𝘱𝘩𝘪𝘵𝘪𝘴𝘢𝘵𝘪𝘰𝘯 𝘱𝘳𝘰𝘤𝘦𝘴𝘴 𝘴𝘵𝘶𝘥𝘺 𝘪𝘯 𝘵𝘦𝘳𝘮𝘴 𝘰𝘧 𝘵𝘪𝘮𝘦 𝘢𝘯𝘥 𝘵𝘦𝘮𝘱𝘦𝘳𝘢𝘵𝘶𝘳𝘦 𝘱𝘢𝘳𝘢𝘮𝘦𝘵𝘦𝘳𝘴” by K. Idczak, S. Owczarek, A. Trembułowicza, and B. Rusin, which provides a step-by-step analysis of high-temperature annealing of a silicon carbide (SiC) crystal using various parameters.

The most significant information concerning obtained results:
• The graphitisation proscess was studied as a function of temperature and time.
• To showcase the role of chosen parameters, four different annealing procedures were used.
• Time parameter determines the sufficient number of free atoms of carbon to form graphene.
• Temperature influences the surface state of the structure and uniformity of graphene on the surface.